features applications 1 h igh diode semiconductor ? marking sot-523 plastic-encapsulate mosfet n - channel mosfet d g sot- 523 ? p roduct summary s 2N7002T k72 v (br)dss r ds(on)max i d 6 0 v 5 @ 10 v 115 m a 7 @ 5 v high density cell design for low r ds(on) voltage controlled small signal switch rugged and reliable high saturation current capability esd protected dc/dc converter load switch for portable devices battery switch parameter symbol value unit drain - source voltage v ds 60 v gate - source voltage v gs 20 v continuous drain current i d 115 m a power dissipation p d 0. 150 w thermal resistance from junction to ambient r ja 833 /w junction temperature t j 150 storage temperature t stg - 55~ +150
2 h igh diode semiconductor electrical ch aracteristics (t a =25 unless otherwise noted) parameter symbol test condition min type max unit static characteristics drain - source breakdown voltage v (br)dss v gs = 0v, i d = 250a 60 v zero gate voltage drain current i dss v ds = 60 v,v gs = 0v 80 n a gate - body leakage current i gss v gs =20v, v ds = 0v 10 a gate threshold voltage v gs(th) v ds =v gs , i d = 250a 1 1. 7 2.5 v on - state drain current i d(on) v gs =10 v, v ds =7 v 500 ma drain - source on - resistance r ds(on) v gs = 10 v, i d = 500m a 1.2 5 ? v gs =5v, i d = 5 0m a 1.3 7 on - state drain - source voltage v ds(on) v gs =10v, i d =500ma 3.75 v v gs =5v, i d =50ma 0.375 dynamic characteristics input capacitance c iss v ds =25 v,v gs =0v,f=1mhz 50 pf output capacitance c oss 25 pf reverse transfer capacitance c rss 5 pf switching characteristics turn - on delay time t d(on) v dd =25 v, r l =50 i d =500ma,v gen =10 v,r g =25 20 ns turn - off delay time td(off) 40 ns source - drain diode characteristics diode forward voltage v ds v gs =0v, i s = 115 m a 0.55 1 .2 v
3 h igh diode semiconductor typical characteristics
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reel taping specifications for surface mount devices-sot-523 h igh diode semiconductor 5
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